Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• other copper(I) β-diketonate complexes, namely, [Cu(hfac)VTMS], [Cu(hfac)DMB], and [Cu(hfac)MHY] the atomic ratios of Cu/C/O/Si were 20–45:35–70:8–14:2–10, 25–60:15–60:5–25:-, and 13:82:3:-, respectively. As-deposited freestanding rods from FEBID experiments with [Cu(hfac)VTMS] showed small Cu

• nanocrystals dispersed in a polymeric carbonaceous matrix, which contains all the ligand elements: carbon, oxygen, fluorine and silicone [29][30]. Therefore, new copper FEBID precursors are still necessary. When designing such new precursors, it should be considered that copper(II) derivatives are more user

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• , the post-growth annealing results differed. Cu-containing deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit for temperatures above 100 °C, due to the migration of Cu atoms from the carbonaceous matrix containing carbon, oxygen, and fluorine atoms. The

Correction: Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1935–1936, doi:10.3762/bjnano.6.196

• Technology, Electron Microscopy Center, Überlandstrasse 129, 8600 Dübendorf, Switzerland AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland 10.3762/bjnano.6.196 Keywords: Cu(hfac)2; Cu

• nanocrystals; focused electron beam induced deposition (FEBID); post-growth annealing of Cu–C material; In Figure 8 of the original article, the scale of the ordinate was wrong. The correct figure looks as follows: Figure 8 in the original article: Calculated resistivity from the resistance measurement of a

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• ) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around

• 150–200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission

• electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed